بهینه سازی درایور ترانزیستورهای قدرت از طریق سنجش حرارتی

بهینه سازی درایور ترانزیستورهای قدرت از طریق سنجش حرارتی

بهینه سازی درایور ترانزیستورهای قدرت از طریق سنجش حرارتی

حجم فایل : ۲٫۵۲KB

تعداد صفحه : ۸ صفحه

فرمت فایل: PDF

قیمت فایل : رایگان

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Optimization of the Driver of GaN Power Transistors
Through Measurement of Their Thermal Behavior

Abstract

GaN field effect power transistors based on Si substrate showlowon-state resistance and very smallCgs capacitance. Therefore these devices are good candidates for high-frequency switching operation. In this paper, we first focus on reverse conduction and transistors behavior during dead times in an inverter leg structure. Then we present an approach by calorimetric method, dedicated to transistors losses evaluation during operation. Using this method, we evaluate in a single measurement the transistors temperature and losses versus a chosen dead time or versus frequency.
At least, we conclude on good practices regarding the drive of these components.

Index Terms

Calorimetry, driver circuits, power converter, power semiconductor devices

I. INTRODUCTION

A. Approach

NOWADAYS, the limits in terms of power density, temperature operation, or the switching frequency of siliconbased power devices are almost reached. A new technological breakthrough, based on wide bandgap semiconductor materials, is underway to overcome these limits. From a physical point
of view, components made of SiC or GaN present a lot of advantages as compared to silicon one [1], [2]. GaN devices are made of wide-band-gap gallium nitride semiconductors which belongs to III–V compound group. The GaN semiconductors present high thermal conductivity and heat capacity; thus, devices based on GaN could operate up to 450 ◦C when grown on GaN or diamond wafers [3]. AlGaN/GaN high eElectron mobility transistors (HEMT) allow high-frequency operations due to
the highmobility of electron at the heterointerface [4]. However, GaN wafers or SiC wafers, which are the best suited substrate for high-temperature operation of GaN transistors, remain of small size and then expensive compared to Si substrates. Today, ۲-in bulk GaN wafers and 6 in engineered GaN substrates are announced by industry for LED applications. Furthermore,